太阳城娱乐

Technology & Innovation

  • Effects of the cap layer on the properties of ALN barrier HEMT grown on 6-inch Si(111) substrate

    Yuanyang Xia,Youhua Zhu,Chunhua Liu,Hongyuan Wei,Tingting Zhang,YeehengLee,TinggangZhu,Meiyu wang,Li Yi and MeiGe

    IOP Publishing   Mater.Res.Express 7(2020)065902

    https://doi.org/10.1088/2053-1591/ab96f5

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