| Product | Withstand voltage | Conduction resistance | Threshold voltage | Model | Package form | Pictures |
| CE65E300DNYI | 650V | 300mΩ | 2.5V | 增强型 单管 | DFN 5*6 |
|
| CE65E160DNHI | 650V | 160mΩ | 2.5V | 增强型 单管 | DFN 8*8 |
|
| CE65E160DNYI | 650V | 160mΩ | 2.5V | 增强型 单管 | DFN 5*6 |
|
| CE65H110TOAI | 650V | 110mΩ | 3.9V | 耗尽型 级联 | TO220 |
|
| CE65H110DNDI | 650V | 110mΩ | 3.9V | 耗尽型 级联 | DFN8*8 |
|
| CE65H160TOAIF | 650V | 160mΩ | 3.9V | 耗尽型 级联 | TO220F |
|
| CE65H160DNGI | 650V | 160mΩ | 1.7V | 耗尽型 级联 | DFN 8*8 |
|
| CE65H270TOBI | 650V | 270mΩ | 3.9V | 耗尽型 级联 | TO252 |
|
| CE65H270TOEI | 650V | 270mΩ | 3.9V | 耗尽型 级联 | TO252 |
|
| CE65H270DNGI | 650V | 270mΩ | 1.7V | 耗尽型 级联 | DFN 8*8 |
|
| CE65H270TOAIF | 650V | 270mΩ | 3.9V | 耗尽型 级联 | TO220F |
|
| CE65H600TOEI | 650V | 600mΩ | 3.9V | 耗尽型 级联 | TO252 |
|
| CE65H600TOAIF | 650V | 600mΩ | 3.9V | 耗尽型 级联 | TO220F |
|
| CE65H900TOEI | 650V | 900mΩ | 3.9V | 耗尽型 级联 | TO252 |
|
| CE65H160DNCI | 650V | 160mΩ | 3.9V | 耗尽型 级联 | DFN5*6 |
|
| CE65H270DNCI | 650V | 270mΩ | 3.9V | 耗尽型 级联 | DFN5*6 |
|
| CE65H600DNCI | 650V | 600mΩ | 3.9V | 耗尽型 级联 | DFN5*6 |
|
| CE65H900DNCI | 650V | 900mΩ | 3.9V | 耗尽型 级联 | DFN5*6 |
|
| CE65H080TOCI | 650V | 80mΩ | 3.9V | 耗尽型 级联 | TO247-3 |
|
Product Category
Processing Procedure
01 photoetching（50mm-200mm）
02 Metal sputtering（Ti、Al、TiN、Cu）
Metal evaporation（Ti、Al、Ni、Pt、Mo、Ta、Ag、Co、Cr,etc.）
03 Dry etching（GaN、Si、SiC、SiO2、Si3N4、AL、TiN、Ni、Cr、Pt, etc.）
04 Wet etching and cleaning
05 Thin film PECVD deposited SiO2, Si3N4, ALD deposited Al2O3, AlN and Si3N4, etc
06 Ion implantation N, BF2, Ar
07 TSV process
08 Grinding, scribing
09 Wafer, device testing
10 Laser slotting
11 Pan cleaning
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