Yulei Jin, Feng Zhou, Member, IEEE, Weizong Xu, Zhengpeng Wang, Tianyang Zhou, Dong Zhou, Fangfang Re, Yuanyang Xia, Leke Wu, Yiheng Li, Tinggang Zhu, Dunjun Chen, Rong Zhang, Jiandong Ye, Youdou Zheng and Hai Lu, Senior Member, IEEE
Feng Zhou, Student Member, IEEE, Weizong Xu, Member, IEEE, Yuanyang Xia, Leke Wu, Tinggang Zhu, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu, Senior Member, IEEE
5.reverse p-n Junction HEMTs-xu 02.pdf
Changkun Zeng , Weizong Xu , Yuanyang Xia , Ke Wang , Fangfang Ren , Dong Zhou , Yiheng Li , Tinggang Zhu , Dunjun Chen , Rong Zhang Published 17 December 2021 • © 2021 The Japan Society of Applied Physics Applied Physics Express, Volume 15, Number 1 Citation Changkun Zeng et al 2022 Appl. Phys. Express 15 016502 Abstract Narrow gate margin has been the critical limiting factor for the p-gate normally-off GaN HEMTs, imposing significant challenges in both gate drive design and gate reliability. In this work, by developing dopant-free p-type polarization doping
Sheng Li a, Chi Zhang a, Siyang Liu a, Jiaxing Wei a, Long Zhang a, Weifeng Sun a,*,
Youhua Zhu b, Tingting Zhang c, Dongsheng Wang c, Yinxia Sun c
a National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
b School of Electronics and Information, Nantong University, Nantong, 226019, China
c CorEnergy Semiconductor Co., LTD, Zhangjiagang, 215600, China
Sheng Li, Siyang Liu, Chi Zhang, Jiaxing Wei, Long Zhang, Weifeng Sun* National ASIC System Engineering Research Center Southeast University Nanjing, China
Youhua Zhu, Tingting Zhang, Dongsheng Wang, Yinxia Sun, Yiheng Li, Tinggang Zhu CorEnergy Semiconductor Co., LTD Zhangjiagang, China
To cite this article: Changkun Zeng et al 2019 Appl. Phys. Express 12 121005
